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| Excelics DATA SHEET * * * * * * +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 20mA PER BIN RANGE D EFA120A Low Distortion GaAs Power FET 670 50 116 D D 48 340 100 40 S 95 G S 80 G 50 S G S ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.0mA Chip Thickness: 75 13 microns All Dimensions In Microns MIN 26.0 8.0 TYP 28.0 28.0 9.5 7.0 34 MAX UNIT dBm dB % 200 140 340 180 -2.0 440 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage Igs=1.2mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 37 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 385mA Ids Forward Gate Current 30mA 5mA Igsf Input Power 26dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 3.7 W 3.1 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA120A DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 --MAG ANG 0.943 -63.6 0.912 -102.6 0.896 -125.1 0.892 -139.2 0.889 -149.7 0.890 -155.8 0.892 -160.3 0.895 -163.5 0.898 -166.1 0.899 -168.3 0.903 -170.5 0.906 -172.2 0.911 -174.5 0.912 -177.1 0.914 -179.8 0.919 176.8 0.921 173.2 0.924 169.5 0.927 166.1 0.931 162.8 0.947 162.4 0.952 160.7 0.957 158.9 0.959 158.2 0.965 157.5 0.968 157.2 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 9.082 141.1 0.034 54.8 6.636 117.0 0.049 36.0 4.987 101.3 0.055 24.4 3.926 89.9 0.057 17.1 3.190 80.2 0.056 12.6 2.675 72.6 0.056 9.4 2.294 65.8 0.055 7.0 2.003 59.7 0.053 5.4 1.773 54.1 0.051 3.7 1.588 48.9 0.048 3.2 1.442 43.6 0.047 2.4 1.318 38.6 0.047 2.8 1.215 33.6 0.045 2.3 1.128 28.4 0.044 1.8 1.055 23.0 0.044 1.7 0.986 17.3 0.044 1.3 0.926 11.6 0.044 0.1 0.868 5.7 0.045 -0.2 0.811 -0.2 0.045 -1.6 0.757 -5.8 0.045 -1.7 0.655 -10.0 0.041 -1.6 0.608 -14.5 0.042 -0.3 0.564 -18.9 0.043 1.2 0.527 -22.6 0.043 4.5 0.499 -25.5 0.043 7.3 0.474 -29.0 0.046 10.0 --- S22 --MAG ANG 0.243 -57.3 0.247 -92.6 0.259 -111.5 0.280 -121.4 0.309 -128.0 0.337 -131.7 0.369 -134.6 0.399 -136.9 0.430 -139.1 0.457 -140.9 0.484 -143.3 0.508 -145.6 0.530 -148.4 0.550 -151.3 0.570 -154.9 0.587 -158.8 0.605 -163.1 0.625 -167.3 0.643 -172.3 0.666 -176.9 0.705 178.4 0.726 174.7 0.749 172.0 0.769 169.7 0.785 167.5 0.803 166.2 The data included 0.7 mils diameter Au bonding wires: 3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 8 source wires, 7 mils each. |
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